M29W102BT M29W102BB
1 Mbit (64Kb x16, Boot Block) Low
Voltage Single Supply Flash Memory
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SINGLE 2.
7 to 3.
6V SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 50ns PROGRAMMING TIME – 10µs per Word typical 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 2 Main Blocks
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PROGRAM/ERASE CONTROLLER – Embedded Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits
TSOP40 (N) 10 x 14mm
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ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1.
Logic Diagram
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UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming
VCC
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TEMPORARY BLOCK ...