M29W160BT M29W160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Low
Voltage Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 2.
7 to 3.
6V SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
TSOP48 (N) 12 x 20mm
1 44
s s
s
SO44 (M)
s
PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
LFBGA48 (ZA) 8 x 6 solder balls
FBGA
s
ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure...