M29W160DT M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SINGLE 2.
7 to 3.
6V SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
s s
Figure 1.
Packages
ACCESS TIME: 70ns PROGRAMMING TIME – 10µs per Byte/Word typical
44
s
35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
1
s
PROGRAM/ERASE CONTROLLER – Embedded Program and Erase algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
TSOP48 (N) 12 x 20mm
SO44 (M)
s
FBGA
s
UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE SECURITY MEMORY BL...