M29W400BT M29W400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low
Voltage Single Supply Flash Memory
s
SINGLE 2.
7 to 3.
6V SUPPLY
VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks
44
s s
s
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
1
TSOP48 (N) 12 x 20mm
SO44 (M)
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ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1.
Logic Diagram
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UNLOCK BYPASS PROGRAM COMMAN...