M29W400DT M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY
VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase and Read
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Figure 1.
Packages
ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks
SO44 (M)
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
TSOP48 (N) 12 x 20mm
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UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby...