M29W640DT M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY
VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase, Read – VPP =12 V for Fast Program (optional)
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Figure 1.
Packages
ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option
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135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 Main Blocks, 64 KBytes each
TSOP48 (N) 12 x 20mm
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
FBGA
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TFBGA63 (ZA) 63 ball array
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