M29W800DT M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY
VOLTAGE – VCC = 2.
7V to 3.
6V for Program, Erase and Read
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Figure 1.
Packages
ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks
SO44 (M)
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
TSOP48 (N) 12 x 20mm
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UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code
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