| Part Number | M306N0FGTFP |
| Manufacturer | Tyco Electronics |
| Title | 60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON |
| Description | SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband ... |
| Features |
racteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.2 Unit °C/W
ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (... |
| Published | May 2, 2005 |
| Datasheet |
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