M58CR032C M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.
8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s SUPPLY
VOLTAGE – VDD = 1.
65V to 2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers
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Figure 1.
Packages
– VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 85, 100, 120 ns
FBGA
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PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word programming option
TFBGA56 (ZB) 6.
5 x 10 mm
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MEMORY BLOCKS – Dual Bank Memory Array: 8/24 Mbit – Parameter Blocks (Top or Bottom location)
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DUAL OPERATIONS – Read in one Bank while Program or Erase in other – No de...