M58MR064C M58MR064D
64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.
8V Supply Flash Memory
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SUPPLY
VOLTAGE – VDD = VDDQ = 1.
65V to 2.
0V for Program, Erase and Read
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– VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 100ns
FBGA
TFBGA48 (ZC) 10 x 4 ball array
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PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option
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MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Logic Diagram
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DUAL OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read a...