M58WRxxxKT/B - 32Mb - 64Mb, 1.
8V, x16 Multi Bank Burst, Flash Features
M58WRxxxKT/B - 32Mb & 64Mb, 1.
8V, x16 Multi Bank Burst, Flash
M58WR032KT, M58WR064KT,
M58WR032KB, M58WR064KB
Features
• Supply
voltage – VDD = 1.
7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.
7V to 2V for I/O buffers – VPP = 9V for fast program
• SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS BURST READ mode: 66 MHz – Asynchronous/synchronous page READ mode – Random access times: 70ns
• SYCHRONOUS BURST READ SUSPEND • Programming time
– 10µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options • Memory blocks – Multiple bank memory array: 4Mb banks – Parameter block...