M58WR064ET M58WR064EB
64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.
8V Supply Flash Memory
FEATURES SUMMARY s SUPPLY
VOLTAGE – VDD = 1.
65V to 2.
2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers – VPP = 12V for fast Program (optional)
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Figure 1.
Package
SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100 ns
FBGA
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PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options
VFBGA56 (ZB) 7.
7 x 9 mm
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MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location)
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