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M58WR064HT M58WR064HB
64 Mbit (4 Mb x16, multiple bank, burst) 1.
8 V supply Flash memories
Features
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Supply
voltage – VDD = 1.
7 V to 2 V for program, erase and read – VDDQ = 1.
7 V to 2.
24 V for I/O buffers – VPP = 12 V for fast program (optional) Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Asynchronous/synchronous page read mode – Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time – 8 µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options Memory blocks – Multiple bank memory array: 4 Mbit banks – Parameter blocks (top or bottom location) Dual operations – P...