M59DR008E M59DR008F
8 Mbit (512Kb x16, Dual Bank, Page) Low
Voltage Flash Memory
PRODUCT PREVIEW
s SUPPLY
VOLTAGE – VDD = VDDQ = 1.
65V to 2.
2V: for Program, Erase and Read – VPP = 12V: optional Supply
Voltage for fast Program and Erase
s ASYNCHRONOUS PAGE MODE READ – Page Width: 4 words – Page Access: 35ns – Random Access: 100ns
s PROGRAMMING TIME – 10µs by Word typical – Double Word Programming Option
s MEMORY BLOCKS – Dual Bank Memory Array: 4 Mbit - 4 Mbit – Parameter Blocks (Top or Bottom location) – Main Blocks
s DUAL BANK OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read and Write operations
s BLOCK PROTECTION/UNPROTECTION – All Blocks ...