M59DR032A M59DR032B
32 Mbit (2Mb x16, Dual Bank, Page) Low
Voltage Flash Memory
PRELIMINARY DATA
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SUPPLY
VOLTAGE – VDD = VDDQ = 1.
65V to 2.
2V: for Program, Erase and Read – VPP = 12V: optional Supply
Voltage for fast Program and Erase
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ASYNCHRONOUS PAGE MODE READ
BGA
– Page Width: 4 words – Page Access: 35ns – Random Access: 100ns
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PROGRAMMING TIME – 10µs by Word typical – Double Word Programming Option
TSOP48 (N) 12 x 20mm
FBGA48 (ZB) 8 x 6 solder balls
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MEMORY BLOCKS – Dual Bank Memory Array: 4 Mbit - 28 Mbit – Parameter Blocks (Top or Bottom location) – Main Blocks Figure 1.
Logic Diagram
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DUAL BANK OPERATIONS – Read within one Bank while Program or Erase within the other ...