| Part Number | M5M417400CJ-6 |
| Manufacturer | Mitsubishi |
| Title | FAST PAGE MODE DRAM |
| Description | This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory ... |
| Features |
Type Name
M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M417400CXX-7,-7S
RAS access
time (max.ns)
50
60
70
CAS access
time (max.ns)
13
15
20
Address access
time (max.ns)
25
30
35
OE access
time (max.ns)
13
15
20
C ycle time (min.ns)
90
110
130
Power dissipa-
tion (typ.mW)
655
540
475
XX=J, TP
• S... |
| File Size | 493.94KB |
| Datasheet |
|
M5M417400CJ-7S : MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M4.
M5M417400CJ-7 : MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M4.
M5M417400CJ-6S : MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M4.
M5M417400CJ-5S : MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M4.