MITSUBISHI LSls
M5M4256P-12, -15, -20
262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a fami Iy of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense
amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package conf...