MITSUBISHI LSls
MSM42S7S·12, -15, -20
262 i44-BIT (262 i44-WORD BY i-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 262 l44-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense
amplifiers assures low power dissipation.
Multiplexed address inputs permit both a reduction in pins to the standard l6-pin package confi...