M65KA128AL
128Mbit (4 Banks x 2M x 16) 1.
8V Supply, Low Power SDRAMs
Feature summary
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128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide Supply
Voltage – VDD = 1.
65V to 1.
95V – VDDQ = 1.
65 to 1.
95V for Input/Output Synchronous Burst Read and Write – Fixed Burst lengths: 1, 2, 4, 8 words or full Page – Burst Types: Sequential and Interleaved.
– Maximum clock frequency: 104MHz – CAS Latency 2, 3 Automatic Precharge Low Power features: – PASR (Partial Array Self Refresh), – Automatic TCSR (Temperature Compensated Self Refresh) – Driver Strength (DS) – Deep Power-Down Mode Delivery form: Unsawn Wafer Auto Refresh and Self Refresh LV
CMOS Interface Compatible w...