MITSUBISHI RF POWER MODULE
M68701
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
OUTLINE DRAWING
60.
5±1 57.
5±0.
5 50.
4±1 2-R1.
6+0.
2 0
Dimensions in mm
BLOCK DIAGRAM
2
3
1
4 5
1
2
3
4
5
0.
45±0.
2 8.
3±1 21.
3±1 43.
3±1 51.
3±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply
voltage Gate bias
voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 5.
5 10 10 -30 to +100 ...