MITSUBISHI RF POWER MODULE
M68710TL
SILICON MOS FET POWER AMPLIFIER, 330-360MHz, 2W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.
2 26.
6±0.
2 21.
2±0.
2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.
5±0.
1
5 1 2 3 4
1
4 5
0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply
voltage Gate bias
voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=330-360MHz, ZG=ZL=50Ω f=330-360MHz, VDD≤9V, ZG=ZL=50Ω f=330-360MHz, VDD≤9V, ZG=ZL=50Ω Ratings 9 4 30 3 -3...