MITSUBISHI LSIs
M6MGB/T166S2BWG
16,777,216-BIT (1,048,576 -WORD BY 16-BIT )
CMOS 3.
3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT)
CMOS SRAM Stacked-CSP (Chip Scale Package)
DESCRIPTION The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 2M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.
3V-only, and high performance non-volatile memory fabricated by
CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.
2M-bits SRAM is a 131,072words unsynchronous SRAM fabricated by silicon-gate
CMOS technology.
M6MGB/T166S2BWG is suitable for the ...