Switching Diodes
MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits
I Features
• Small S-mini type package, allowing high-density mounting
• Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown
voltage (VR = 80 V)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse
voltage (DC) Peak reverse
voltage Average forward current Peak forward current
Non-repetitive peak forward surge current*
VR VRM IF(AV) IFM IFSM
80 80 100 225 500
Junction temperature Storage temperature Note) * : t = 1 s
Tj 150 Tstg −55 to +150
Unit V V mA mA mA
°C °C
1.
25±0.
1 0.
35±0.
1
Unit : mm
0.
7±0.
1
1 0 to 0.
1
1.
7±0.
1 2.
5±0.
2
2
0.
5±0.
1 5°
0.
16+–0...