Schottky Barrier Diodes (SBD)
MA2HD08
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
3.
2 ± 0.
3 0 to 0.
05
• Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition
1.
9 ± 0.
3
2
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Repetitive peak reverse
voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 −40 to +125 Unit V
0.
9 ± 0.
4 0.
9 ± 0.
4 3.
8 ± 0.
2 0.
25 − 0.
05 1.
85 ± 0.
3
+ 0.
1
V A A °C °C
1 : Anode 2 : Cathode Half New Mini-Power Type Package
Marking Symbol: PP
Note) * : The peak...