Band Switching Diodes
MA3X057
Silicon epitaxial planar type
2.
8 − 0.
3
+ 0.
2
Unit : mm
0.
65 ± 0.
15
For band switching I Features
• Low forward dynamic resistance rf • Less
voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.
65 ± 0.
15
1.
5
+ 0.
25 − 0.
05
0.
95
1.
9 ± 0.
2
2.
9 − 0.
05
1 3 2
+ 0.
2
0.
95
1.
45 0 to 0.
1
Parameter Reverse
voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100 −25 to +85 −55 to +150
Unit V mA °C °C
0.
1 to 0.
3 0.
4 ± 0.
2
0.
8
I Absolute Maximum Ratings Ta = 25°C
1.
1 − 0.
1
1 : Anode 2 : NC JEDE...