Band Switching Diodes
MA3Z080D, MA3Z080E
Silicon epitaxial planar type
Unit : mm
For band switching
2.
1 ± 0.
1 0.
425 1.
25 ± 0.
1 0.
425
+ 0.
1
• Low forward dynamic resistance rf • Less
voltage dependence of diode capacitance CD • S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package
2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C
0.
9 ± 0.
1
1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin)
Stor...