Switching Diodes
MA6X125
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Four-element contained in one package, allowing high-density mounting
2.
8 − 0.
3 0.
65 ± 0.
15 6
1.
9 ± 0.
2 0.
95 0.
95
+ 0.
2
1.
5 − 0.
05 1
+ 0.
25
0.
65 ± 0.
15
1.
45 ± 0.
1 0.
3 − 0.
05
+ 0.
1
2.
9 − 0.
05
+ 0.
2
5
2
4
3
Peak reverse
voltage Forward current (DC)* Peak forward current*
VRM IF IFM Tj Tstg
40 100 200 150 −55 to +150
V mA mA °C °C
Junction temperature Storage temperature Note) *1 : Value for single diode
1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4
0 to 0.
1
Reverse
voltage (DC)
VR
40
V
0.
1 to 0.
3 0.
4 ± 0.
2
0.
8
Parameter
Symbol
Rating
Unit
1.
1 − 0.
1
4 : Anode 3 ...