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RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V
1/11/06
Preliminary
MAPL-000817-015C00
Features
Designed for broadband commercial applications up to 1.
7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.
5W • Gain: 16.
5dB • Efficiency: 50% • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz
•
Package Style
MAPL-000817-015C00
Maximum Ratings
Parameter Drain—Source
Voltage Gate—Source
Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.
25 -65 to +150 150 Units Vdc Vdc W °C °C
Thermal Characteristics
Ch...