RF Power Field Effect Transistor
www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V 5/21/04 Preliminary MAPLST0810-045CF Features Q Package Style Q Q Q Q Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 45W (P1dB) Q Gain: 17.5dB Q Efficiency: 50% Ruggedness: 10:1 VSWR...
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