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RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V
5/24/04
Preliminary
MAPLST1820-060CF
Features
Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band.
Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Output Power: 30W Power Gain: 13dB (typ.
) Efficiency: 35% (typ.
)
Package Style
P-238
Maximum Ratings
Parameter Drain—Source
Voltage Gate—Source
Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characterist...