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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50110-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (× 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM
MB84VD2002-10/MB84VD2003-10
s FEATURES
• Power supply
voltage of 2.
7 to 3.
6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Simultaneous operations Read-while Erase or Read-while-Program • Minimum 100,000 write/erase cycles • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.
Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• Boot Code Sector Architecture MB84VD2002: Top sec...