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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20874-7E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29DL16XTD/BD -70/90
s FEATURES
Dual Operation
• 0.
33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.
0 V read, program, and erase Minimizes system level power requirements (Continued)
s PRODUCT LINE UP
Part No.
Ordering Pa...