IGBT MODULE
MBN1200D25B
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability.
(delta Tc=70°C,N20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving power due to low input capacitance MOS gate.
*High reliability,high durability module.
* Isolated head sink (terminal to base).
Weight: 1,200 (g)
C C G E
6-M8 3-M4
8-φ7
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter
Voltage Gate Emitter
Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
DC 1ms DC 1ms
Collector Power Dissipation Junction Temperature...