MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRF1045/D
SWITCHMODE™ Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use as rectifiers in very low–
voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes.
• • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward
Voltage Drop High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transient...