MCH3375
Power
MOSFET
–30V, 295mΩ, –1.
6A, Single P-Channel
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Features
• On-Resistance RDS(on)1=227mΩ (typ) • 4V Drive • High Speed Switching and Low Loss • Pb-Free, Halogen Free and RoHS Compliance
VDSS
–30V
RDS(on) Max
295mΩ@ –10V 523mΩ@ –4.
5V 609mΩ@ –4V
ID Max
–1.
6A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source
Voltage
VDSS
–30 V
Gate to Source
Voltage Drain Current (DC)
VGSS ID
±20 –1.
6
V A
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP
–6.
4
A
Power Dissipation When mounted on ceramic substrate (900mm2 × 0.
8mm)
Junction Temperature
PD Tj
0.
8 W 150 °C
Storage Temperature
Tstg
−55 to +150
°C
This ...