Ordering number : ENN7998
MCH5812
com
MCH5812
Features
•
MOSFET : N-Channel Silicon
MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
•
•
Composite type with a N-channel sillicon
MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.
[
MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• 1.
8V drive.
[SBD] • Short reverse recovery time.
• Low forward
voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [
MOSFET] Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage ...