MDD1951– Single N-Channel Trench
MOSFET 60V
MDD1951
Single N-Channel Trench
MOSFET 60V, 17.
9A, 45.
0mΩ
General Description
The MDD1951 uses advanced Magnachip’s trench
MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 60V
ID = 17.
9A @VGS = 10V
RDS(ON)
45.
0mΩ@ VGS = 10V
55.
0mΩ@ VGS = 4.
5V
Applications
Inverters General purpose applications
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Curr...