MDD2N60 N-channel
MOSFET 600V
MDD2N60
N-Channel
MOSFET 600V, 1.
9A, 4.
5Ω
General Description
These N-channel
MOSFET are produced using advanced Magnachip’s
MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 1.
9A RDS(ON) ≤ 4.
5Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanch...