MDD3N50 N-channel
MOSFET 500V
Preliminary – Subject to change without notice
MDD3N50
N-Channel
MOSFET 500V, 2.
8 A, 2.
5Ω
General Description
The MDD3N50 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD3N50 is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = 2.
8A RDS(ON) ≤ 2.
5Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche...