MDD6N60G N-channel
MOSFET 600V
MDD6N60G
N-Channel
MOSFET 600V, 4.
5A, 1.
45Ω
General Description
These N-channel
MOSFET are produced using advanced MagnaChip’s
MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
à à à VDS = 600V ID = 4.
5A RDS(ON) ≤ 1.
45Ω @ VGS = 10V @ VGS = 10V
Applications
à à à Power Supply PFC High Current, High Speed Switching
D
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalan...