MDI6N60B N-channel
MOSFET 600V
MDI6N60B
N-Channel
MOSFET 600V, 4.
5A, 1.
45Ω
General Description
The MDI6N60B uses advanced MagnaChip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDI6N60B is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 4.
5A RDS(ON) ≤ 1.
45Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy...