MDI6N65B N-channel
MOSFET 650V
MDI6N65B
N-Channel
MOSFET 650V, 5.
7A, 1.
45Ω
General Description
The MDI6N65B use advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDI6N65B is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 650V ID = 5.
7A RDS(ON) ≤ 1.
45Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
GDS
TO-251-SS (IPAK-SS)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) ...