MDP11N60 N-channel
MOSFET 600V
MDP11N60
N-Channel
MOSFET 600V, 11A, 0.
55Ω
General Description
The MDP11N60 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP11N60 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.
55Ω
Applications
@ VGS = 10V @ VGS = 10V
Power Supply PFC High Current, High Speed Switching
GDS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Drain-Source
Voltage @ Tjmax Gate-Source
Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipa...