MDP1922
Single N-channel Trench
MOSFET 100V, 97A, 8.
4mΩ
General Description
The MDP1922 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDP1922 is suitable device for DC/DC Converter and general purpose applications.
Features
VDS = 100V ID = 97A @VGS = 10V RDS(ON)
8.
4 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy
TC=25oC TC=100oC
TC=25oC TC=100oC
Junction and Storage Tempe...