MDS1651 – Single N-channel Trench
MOSFET 30V
MDS1651
Single N-Channel Trench
MOSFET 30V, 11.
6A, 17mΩ
General Description
The MDS1651 uses advanced MagnaChip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.
MDS1651 is suitable device for PWM, Load Switching
and general purpose applications.
Features
à VDS = 30V à ID = 11.
6A@VGS = 10V à RDS(ON)
17mΩ @VGS = 10V 22mΩ @VGS = 4.
5V
Applications
à Portable application
5(D) 6(D) 7(D) 8(D)
D
4(G)
3(S) 2(S) 1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation (1)
...