MDS1652E – Single N-Channel Trench
MOSFET 30V
Preliminary – Subject to change without notice
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MDS1652E
Single N-channel Trench
MOSFET 30V, 16A, 5.
0mΩ
ㄹ
General Description
The MDS1652E uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Excellent low RDS(ON), low gate charge and operation for Battery Applications.
Features
VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX)
5.
0mΩ @VGS = 10V 8.
5mΩ @VGS = 4.
5V
5(D) 6(D) 7(D) 8(D)
4(G) 3(S) 2(S) 1(S)
D
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current (1)
Pulsed...