MDS1656– N-Channel Trench
MOSFET 30V, 7.
2A,28mΩ
MDS1656
Single N-Channel Trench
MOSFET 30V, 7.
2A, 28mΩ
General Description
The MDS1656 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 30V ID = 7.
2A @VGS = 10V RDS(ON) 28mΩ @VGS = 10V 42mΩ @VGS = 4.
5V
Applications
Inverters General purpose applications
5(D) 6(D) 7(D) 8(D)
D
4(G)
3(S) 2(S) 1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current(1)
Characteristics
Pulsed...