MDS1903 – Single N-Channel Trench
MOSFET 100V
MDS1903
Single N-channel Trench
MOSFET 100V, 3.
3A, 110mΩ
ㄹ
General Description
The MDS1903 uses advanced Magnachip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDS1903 is suitable device for DC to DC converter and general purpose applications.
Features
VDS = 100V
ID = 3.
3A @VGS = 10V
RDS(ON) (MAX)
110mΩ @VGS = 10V
120mΩ @VGS = 6.
0V
5(D) 6(D) 7(D) 8(D)
4(G) 3(S) 2(S) 1(S)
D
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Si...