MDS3753E– P-Channel Trench
MOSFET
MDS3753E
P-Channel Trench
MOSFET, -40V, -7.
1A, 30mΩ
General Description
The MDS3753E uses advanced Magnachip’s
MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Low RDS(ON) and low gate charge operation offer superior benefit in the application.
Features
VDS = -40V
ID = -7.
1A @ VGS = 10V
RDS(ON)
30m @ VGS = -10V
37m @ VGS = -4.
5V
Applications
Inverters General purpose applications
D
8(D)7(D)6(D)5(D)
1(S)2(S)3(S) 4(G)
G S
Absolute Maximum Ratings (TA =25oC unless otherwise noted)
Characteristics Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain C...