MDS5651– Dual N-Channel Trench
MOSFET 30V, 7.
5A, 26mΩ
MDS5651
Dual N-Channel Trench
MOSFET 30V, 7.
5A, 26mΩ
General Description
The MDS5651 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 30V ID = 7.
5A @VGS = 10V RDS(ON) 26mΩ @VGS = 10V 39mΩ @VGS = 4.
5V
Applications
Inverters General purpose applications
6(D2)5(D2) 7(D1) 8(D1)
3(S24) (G2) 2(G1) 1(S1)
D1 D2
G1
G2 S1
S2
Absolute Maximum Ratings (Ta =25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current(1)
Pu...